STMicroelectronics STB80NF55L-06T4

STB80NF55L-06T4 STMicroelectronics
STB80NF55L-06T4
STB80NF55L-06T4
ET11350479
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
100 nC @ 5 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
STripFET II
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 40A, 10V
edacadModel:
STB80NF55L-06T4 Models
Gate Charge (Qg) (Max) @ Vgs:
136 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2035602
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4850 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB80
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is STB80NF55L-06T4. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 100 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 300 w maximum power dissipation. The product stripfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 4.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 6.5mohm @ 40a, 10v. The maximum gate charge and given voltages include 136 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 4850 pf @ 25 v. The product stripfet™ ii, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb80, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly Chg 18/Oct/2019(PCN Assembly/Origin)
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IPG-PWR/14/8422 11/Apr/2014(PCN Design/Specification)
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D2PAK Lead Modification 04/Oct/2013(PCN Design/Specification)
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Mult Dev obs 29/Jan/2024(PCN Obsolescence/ EOL)
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ST(B,P)80NF55L-06(Datasheets)
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Mult Dev Inner Box Chg 9/Dec/2021(PCN Packaging)

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