Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
1.75mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 4.5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Series:
STripFET V
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
40 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
700mV @ 250µA (Min)
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
30mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.6 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
367 pF @ 16 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ V
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
2.3A (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STR2N2
ECCN:
EAR99
