Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.4mm
Width:
0.65mm
Length:
0.85mm
Maximum Drain Source Resistance:
3.5 Ω
Package Type:
SOT-1123
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NTNUS3171
Detailed Description:
P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123
Input Capacitance (Ciss) (Max) @ Vds:
13pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 100mA, 4.5V
Supplier Device Package:
SOT-1123
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-1123
Power Dissipation (Max):
125mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
150mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
