Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
23 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.05mm
Width:
5.1mm
Length:
6.1mm
Maximum Drain Source Resistance:
60 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NVMFD5877
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
39mOhm @ 7.5A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3.2W
Current - Continuous Drain (Id) @ 25°C:
6A
Manufacturer:
ON Semiconductor
