Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
15.25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
110 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.7 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Base Part Number:
NTGS4111
Detailed Description:
P-Channel 30V 2.6A (Ta) 630mW (Ta) Surface Mount 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.7A, 10V
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max):
630mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
