STMicroelectronics STW56N60DM2

STW56N60DM2 STMicroelectronics
STW56N60DM2
STW56N60DM2
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Channel Type:
N
Length:
15.75mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
360 W
Series:
MDmesh DM2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
20.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
60 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
60mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STW56N60DM2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5866597
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
360W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4100 pF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ DM2
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW56
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STW56N60DM2. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.15mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 90 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.75mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 360 w maximum power dissipation. The product mdmesh dm2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 20.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.6v . It provides up to 60 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 60mohm @ 25a, 10v. The maximum gate charge and given voltages include 90 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 360w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 4100 pf @ 100 v. The product mdmesh™ dm2, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw56, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
STW56N60DM2, N-channel 600 V, 52 mOhm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
Wafer 15/Feb/2019(PCN Assembly/Origin)
pdf icon
STW56N60DM2(Datasheets)
pdf icon
Standard outer labelling 15/Nov/2023(PCN Packaging)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search STW56N60DM2 on website for other similar products.
We accept all major payment methods for all products including ET11088232. Please check your shopping cart at the time of order.
You can order STMicroelectronics brand products with STW56N60DM2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics STW56N60DM2. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics STW56N60DM2.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11088232 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11088232.
Yes. We ship STW56N60DM2 Internationally to many countries around the world.