Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.8 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
70 W
Series:
MDmesh, SuperMESH
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.15mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
title:
STP4NK60Z
Vgs(th) (Max) @ Id:
4.5V @ 50µA
REACH Status:
REACH Unaffected
edacadModel:
STP4NK60Z Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/654533
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
70W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
510 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperMESH™
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP4NK60
ECCN:
EAR99
