Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
STB37N60
Channel Type:
N
Maximum Gate Threshold Voltage:
4.9V
Maximum Drain Source Resistance:
0.69 Ω
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12 A
Transistor Material:
SiC
Pin Count:
3
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 1200V 12A (Tc) 250W (Tc) Surface Mount H2Pak-2
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STH12
Gate Charge (Qg) (Max) @ Vgs:
44.2nC @ 10V
Rds On (Max) @ Id, Vgs:
690mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1370pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ K5
Supplier Device Package:
H2Pak-2
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Customer Reference:
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
