Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.15mm
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
400 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
title:
IRF630
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
IRF630 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/603782
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
75W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 25 V
Mounting Type:
Through Hole
Series:
MESH OVERLAY™ II
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF6
ECCN:
EAR99
