Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
8.6 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
625 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
0.4V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
160 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.3 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
41 Weeks
Detailed Description:
P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id:
1.2V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Base Part Number:
NTJS31
Gate Charge (Qg) (Max) @ Vgs:
8.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.3A, 4.5V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 12V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-88/SC70-6/SOT-363
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Customer Reference:
Power Dissipation (Max):
625mW (Ta)
Technology:
MOSFET (Metal Oxide)
