Maximum Continuous Drain Current:
132 A
Transistor Material:
Si
Width:
23.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
364 nC @ 10 V
Channel Type:
N
Length:
25.25mm
Pin Count:
24
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
570 W
Series:
GigaMOS, HiperFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
13 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs:
13mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs:
364 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
570W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
23800 pF @ 25 V
standardLeadTime:
45 Weeks
Mounting Type:
Surface Mount
Series:
GigaMOS™, HiPerFET™, TrenchT2™
Supplier Device Package:
24-SMPD
Current - Continuous Drain (Id) @ 25°C:
132A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MMIX1F180
ECCN:
EAR99
