ON Semiconductor NCP5111DR2G

NCP5111DR2G ON Semiconductor
NCP5111DR2G
NCP5111DR2G
ON Semiconductor

Product Information

Driven Configuration:
Half-Bridge
Base Part Number:
NCP5111
Detailed Description:
Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
Current - Peak Output (Source, Sink):
250mA, 500mA
Mounting Type:
Surface Mount
Gate Type:
IGBT, N-Channel MOSFET
Rise / Fall Time (Typ):
85ns, 35ns
Supplier Device Package:
8-SOIC
Number of Drivers:
2
Channel Type:
Synchronous
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 125°C (TJ)
Voltage - Supply:
10V ~ 20V
Customer Reference:
Input Type:
Non-Inverting
Package / Case:
8-SOIC (0.154", 3.90mm Width)
High Side Voltage - Max (Bootstrap):
600V
Logic Voltage - VIL, VIH:
0.8V, 2.3V
Manufacturer Standard Lead Time:
29 Weeks
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NCP5111DR2G. It has a half-bridge driven configuration. Base Part Number: ncp5111. It features half-bridge gate driver ic non-inverting 8-soic. Features a peak output current of 250ma, 500ma. The product is available in surface mount configuration. It is a igbt, n-channel mosfet gate. The typical rise and fall time of the product is 85ns, 35ns. 8-soic is the supplier device package value. Number of Drivers equals 2. The product is available in [Cannel Type] channel. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 125°c (tj) operating temperature range. It has optimum voltage supply of 10v ~ 20v. It carries non-inverting input type. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum high side voltage is 600v . Logic voltage of 0.8v, 2.3v. It has typical 29 weeks of manufacturer standard lead time. The on semiconductor's product offers user-desired applications.

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Copper Wire Revision 24/Feb/2015(PCN Design/Specification)
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Copper Wire Update 13/Jan/2015(PCN Design/Specification)
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NCP5111(Datasheets)
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Mult MSL1 Pkg Rev 20/Dec/2018(PCN Packaging)

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FAQs

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