Fujitsu Semiconductor Memory Solution MB85R4M2TFN-G-ASE1

MB85R4M2TFN-G-ASE1 Fujitsu Semiconductor Memory Solution
Fujitsu Semiconductor Memory Solution

Product Information

HTSUS:
8542.32.0071
RoHS Status:
ROHS3 Compliant
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
150ns
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
4Mbit
Package / Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
title:
MB85R4M2TFN-G-ASE1
REACH Status:
REACH Unaffected
Memory Organization:
256K x 16
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Access Time:
150 ns
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
44-TSOP
Memory Type:
Non-Volatile
Voltage - Supply:
1.8V ~ 3.6V
ECCN:
EAR99
Technology:
FRAM (Ferroelectric RAM)
Base Product Number:
MB85R4
Memory Format:
FRAM
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This is manufactured by Fujitsu Semiconductor Memory Solution. The manufacturer part number is MB85R4M2TFN-G-ASE1. It is assigned with possible HTSUS value of 8542.32.0071. The product is rohs3 compliant. It is a parallel memory interface. It allows a 150ns of write cycle time. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4mbit. Moreover, the product comes in 44-tsop (0.400", 10.16mm width). In addition, tray is the available packaging type of the product. In addition, it is reach unaffected. While the product's memory is organised as 256k x 16. Its typical moisture sensitivity level is 1 (unlimited). It allows 150 ns access time. The product is available in surface mount configuration. 44-tsop is the supplier device package value. It is a type of non-volatile memory type. It has optimum voltage supply of 1.8v ~ 3.6v. The product is designated with the ear99 code number. This product use fram (ferroelectric ram) technology. Moreover, it corresponds to mb85r4, a base product number of the product. It is a sort of fram memory.

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MB85Ryy EOL 15/Feb/2019(PCN Obsolescence/ EOL)
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Interior Box 14/Apr/2023(PCN Packaging)

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