Fujitsu Semiconductor MB85RE4M2TFN-G-ASE1

Fujitsu Semiconductor

Product Information

HTSUS:
8542.32.0071
RoHS Status:
ROHS3 Compliant
Memory Interface:
-
Write Cycle Time - Word, Page:
150ns
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
4Mb (256K x 16)
Package / Case:
44-TSOP (0.400", 10.16mm Width)
Package:
Tray
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
44-TSOP
Memory Type:
Non-Volatile
Voltage - Supply:
1.8V ~ 3.6V
ECCN:
3A991B1B1
Technology:
FRAM (Ferroelectric RAM)
Base Product Number:
MB85RE4
Memory Format:
FRAM
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This is manufactured by Fujitsu Semiconductor. The manufacturer part number is MB85RE4M2TFN-G-ASE1. It is assigned with possible HTSUS value of 8542.32.0071. The product is rohs3 compliant. It allows a 150ns of write cycle time. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4mb (256k x 16). Moreover, the product comes in 44-tsop (0.400", 10.16mm width). It is shipped in tray package . Its typical moisture sensitivity level is 3 (168 hours). The product is available in surface mount configuration. 44-tsop is the supplier device package value. It is a type of non-volatile memory type. It has optimum voltage supply of 1.8v ~ 3.6v. The product is designated with the 3a991b1b1 code number. This product use fram (ferroelectric ram) technology. Moreover, it corresponds to mb85re4, a base product number of the product. It is a sort of fram memory.

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MB85Ryy EOL 15/Feb/2019(PCN Obsolescence/ EOL)
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MB85RE4M2T Preliminary~(Datasheets)

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