Fujitsu Semiconductor MB85R1002ANC-GE1

MB85R1002ANC-GE1 Fujitsu Semiconductor
MB85R1002ANC-GE1
Fujitsu Semiconductor

Product Information

HTSUS:
8542.32.0071
RoHS Status:
ROHS3 Compliant
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
150ns
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
1Mb (64K x 16)
Package / Case:
48-TFSOP (0.488", 12.40mm Width)
REACH Status:
REACH Unaffected
Package:
Tray
Moisture Sensitivity Level (MSL):
2 (1 Year)
standardLeadTime:
24 Weeks
Access Time:
150 ns
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
48-TSOP
Memory Type:
Non-Volatile
Voltage - Supply:
3V ~ 3.6V
ECCN:
EAR99
Technology:
FRAM (Ferroelectric RAM)
Base Product Number:
MB85R1002
Memory Format:
FRAM
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This is manufactured by Fujitsu Semiconductor. The manufacturer part number is MB85R1002ANC-GE1. It is assigned with possible HTSUS value of 8542.32.0071. The product is rohs3 compliant. It is a parallel memory interface. It allows a 150ns of write cycle time. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 1mb (64k x 16). Moreover, the product comes in 48-tfsop (0.488", 12.40mm width). In addition, it is reach unaffected. It is shipped in tray package . Its typical moisture sensitivity level is 2 (1 year). It has a long 24 weeks standard lead time. It allows 150 ns access time. The product is available in surface mount configuration. 48-tsop is the supplier device package value. It is a type of non-volatile memory type. It has optimum voltage supply of 3v ~ 3.6v. The product is designated with the ear99 code number. This product use fram (ferroelectric ram) technology. Moreover, it corresponds to mb85r1002, a base product number of the product. It is a sort of fram memory.

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MB85R1002A(Datasheets)

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