Fujitsu Electronics America, Inc. MB85RS2MLYPN-G-AWEWE1

Fujitsu Electronics America, Inc.

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Memory Type:
Non-Volatile
Detailed Description:
FRAM (Ferroelectric RAM) Memory IC 2Mb (256K x 8) SPI 50MHz 8-DFN (5x6)
Clock Frequency:
50MHz
Mounting Type:
Surface Mount
Memory Interface:
SPI
Supplier Device Package:
8-DFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 125°C (TA)
Memory Size:
2Mb (256K x 8)
Voltage - Supply:
1.7V ~ 1.95V
Customer Reference:
Package / Case:
8-VDFN Exposed Pad
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Manufacturer:
Fujitsu Electronics America, Inc.
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This is manufactured by Fujitsu Electronics America, Inc.. The manufacturer part number is MB85RS2MLYPN-G-AWEWE1. It has typical 12 weeks of manufacturer standard lead time. It is a type of non-volatile memory type. It features fram (ferroelectric ram) memory ic 2mb (256k x 8) spi 50mhz 8-dfn (5x6). The product boasts a clock frequency of 50mhz. The product is available in surface mount configuration. It is a spi memory interface. 8-dfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 125°c (ta) operating temperature range. It holds a typical memory size of 2mb (256k x 8). It has optimum voltage supply of 1.7v ~ 1.95v. Moreover, the product comes in 8-vdfn exposed pad. It is a sort of fram memory. This product use fram (ferroelectric ram) technology. The fujitsu electronics america, inc.'s product offers user-desired applications.

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MB85RS2MLY(Datasheets)

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