Fujitsu Electronics America, Inc. MB85RE4M2TFN-G-ASE1

Fujitsu Electronics America, Inc.

Product Information

Memory Type:
Non-Volatile
Detailed Description:
FRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16) 44-TSOP
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP
Write Cycle Time - Word, Page:
150ns
Packaging:
Tray
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
4Mb (256K x 16)
Voltage - Supply:
1.8V ~ 3.6V
Package / Case:
44-TSOP (0.400", 10.16mm Width)
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Manufacturer:
Fujitsu Electronics America, Inc.
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This is manufactured by Fujitsu Electronics America, Inc.. The manufacturer part number is MB85RE4M2TFN-G-ASE1. It is a type of non-volatile memory type. It features fram (ferroelectric ram) memory ic 4mb (256k x 16) 44-tsop. The product is available in surface mount configuration. 44-tsop is the supplier device package value. It allows a 150ns of write cycle time. In addition, tray is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4mb (256k x 16). It has optimum voltage supply of 1.8v ~ 3.6v. Moreover, the product comes in 44-tsop (0.400", 10.16mm width). It is a sort of fram memory. This product use fram (ferroelectric ram) technology. The fujitsu electronics america, inc.'s product offers user-desired applications.

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MB85Ryy EOL 15/Feb/2019(PCN Obsolescence/ EOL)
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MB85RE4M2T Preliminary~(Datasheets)

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