Renesas Electronics America Inc. 71256S35TDB

Renesas Electronics America Inc.

Product Information

HTSUS:
8542.32.0041
RoHS Status:
RoHS non-compliant
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
35ns
Operating Temperature:
-55°C ~ 125°C (TA)
Memory Size:
256Kbit
Package / Case:
28-CDIP (0.300", 7.62mm)
REACH Status:
REACH Unaffected
Memory Organization:
32K x 8
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Access Time:
35 ns
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
28-CDIP
Memory Type:
Volatile
Voltage - Supply:
4.5V ~ 5.5V
ECCN:
3A001A2C
Technology:
SRAM - Asynchronous
Base Product Number:
71256S
Memory Format:
SRAM
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This is manufactured by Renesas Electronics America Inc.. The manufacturer part number is 71256S35TDB. It is assigned with possible HTSUS value of 8542.32.0041. The product is rohs non-compliant. It is a parallel memory interface. It allows a 35ns of write cycle time. The product has -55°c ~ 125°c (ta) operating temperature range. It holds a typical memory size of 256kbit. Moreover, the product comes in 28-cdip (0.300", 7.62mm). In addition, it is reach unaffected. While the product's memory is organised as 32k x 8. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It allows 35 ns access time. The product is available in through hole configuration. 28-cdip is the supplier device package value. It is a type of volatile memory type. It has optimum voltage supply of 4.5v ~ 5.5v. The product is designated with the 3a001a2c code number. This product use sram - asynchronous technology. Moreover, it corresponds to 71256s, a base product number of the product. It is a sort of sram memory.

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PCN Repl/Subs 06-Sep-22(PCN Obsolescence/ EOL)
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PCN Rev 10-7-22(PCN Obsolescence/ EOL)
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Obs Notice 10/Aug/2022(UNKNOWN TYPE)
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All Dev Label Chg 1/Dec/2022(PCN Packaging)

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