Toshiba Memory America, Inc. TC58NYG2S0HBAI4

TC58NYG2S0HBAI4 Toshiba Memory America, Inc.
Toshiba Memory America, Inc.

Product Information

Detailed Description:
FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) 63-TFBGA (9x11)
Mounting Type:
Surface Mount
Supplier Device Package:
63-TFBGA (9x11)
Write Cycle Time - Word, Page:
25ns
Memory Type:
Non-Volatile
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
4Gb (512M x 8)
Voltage - Supply:
1.7V ~ 1.95V
Package / Case:
63-VFBGA
Manufacturer:
Toshiba Memory America, Inc.
Technology:
FLASH - NAND (SLC)
Memory Format:
FLASH
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This is manufactured by Toshiba Memory America, Inc.. The manufacturer part number is TC58NYG2S0HBAI4. It features flash - nand (slc) memory ic 4gb (512m x 8) 63-tfbga (9x11). The product is available in surface mount configuration. 63-tfbga (9x11) is the supplier device package value. It allows a 25ns of write cycle time. It is a type of non-volatile memory type. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4gb (512m x 8). It has optimum voltage supply of 1.7v ~ 1.95v. Moreover, the product comes in 63-vfbga. The toshiba memory america, inc.'s product offers user-desired applications. This product use flash - nand (slc) technology. It is a sort of flash memory.

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