Cypress Semiconductor Corp S29GL512S11FHB020

S29GL512S11FHB020 Cypress Semiconductor Corp
Cypress Semiconductor Corp

Product Information

HTSUS:
8542.32.0071
RoHS Status:
ROHS3 Compliant
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
60ns
Operating Temperature:
-40°C ~ 105°C (TA)
Memory Size:
512Mb (32M x 16)
Package / Case:
64-LBGA
REACH Status:
REACH Unaffected
Package:
Tray
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Access Time:
110 ns
Mounting Type:
Surface Mount
Series:
GL-S
Supplier Device Package:
64-FBGA (11x13)
Memory Type:
Non-Volatile
Voltage - Supply:
2.7V ~ 3.6V
ECCN:
3A991B1A
Technology:
FLASH - NOR
Base Product Number:
S29GL512
Memory Format:
FLASH
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This is manufactured by Cypress Semiconductor Corp. The manufacturer part number is S29GL512S11FHB020. It is assigned with possible HTSUS value of 8542.32.0071. The product is rohs3 compliant. It is a parallel memory interface. It allows a 60ns of write cycle time. The product has -40°c ~ 105°c (ta) operating temperature range. It holds a typical memory size of 512mb (32m x 16). Moreover, the product comes in 64-lbga. In addition, it is reach unaffected. It is shipped in tray package . Its typical moisture sensitivity level is 3 (168 hours). It allows 110 ns access time. The product is available in surface mount configuration. The product gl-s, is a highly preferred choice for users. 64-fbga (11x13) is the supplier device package value. It is a type of non-volatile memory type. It has optimum voltage supply of 2.7v ~ 3.6v. The product is designated with the 3a991b1a code number. This product use flash - nor technology. Moreover, it corresponds to s29gl512, a base product number of the product. It is a sort of flash memory.

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Mult Dev Wafer Site Chg 7/Apr/2020(PCN Assembly/Origin)
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Die Epoxy Chg 05/Nov/2015(PCN Design/Specification)
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Mult Device Serial No Mark 26/Sep/2017(PCN Design/Specification)
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Ship Label/Document Standardization 24/Jan/2018(PCN Packaging)
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Ship Label REV(PCN Packaging)

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