Cypress Semiconductor Corp CY7C136-55JXI

CY7C136-55JXI Cypress Semiconductor Corp
Cypress Semiconductor Corp

Product Information

HTSUS:
8542.32.0041
RoHS Status:
ROHS3 Compliant
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
55ns
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
16Kb (2K x 8)
Package / Case:
52-LCC (J-Lead)
REACH Status:
REACH Unaffected
Package:
Tube
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Access Time:
55 ns
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
52-PLCC (19.13x19.13)
Memory Type:
Volatile
Voltage - Supply:
4.5V ~ 5.5V
ECCN:
EAR99
Technology:
SRAM - Dual Port, Asynchronous
Base Product Number:
CY7C136
Memory Format:
SRAM
Checking for live stock

This is manufactured by Cypress Semiconductor Corp. The manufacturer part number is CY7C136-55JXI. It is assigned with possible HTSUS value of 8542.32.0041. The product is rohs3 compliant. It is a parallel memory interface. It allows a 55ns of write cycle time. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 16kb (2k x 8). Moreover, the product comes in 52-lcc (j-lead). In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is 3 (168 hours). It allows 55 ns access time. The product is available in surface mount configuration. 52-plcc (19.13x19.13) is the supplier device package value. It is a type of volatile memory type. It has optimum voltage supply of 4.5v ~ 5.5v. The product is designated with the ear99 code number. This product use sram - dual port, asynchronous technology. Moreover, it corresponds to cy7c136, a base product number of the product. It is a sort of sram memory.

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Date Code/Shelf Life Chgs 18/Jul/2019(PCN Packaging)
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Ship Label REV(PCN Packaging)

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You will get a confirmation email regarding your order of Cypress Semiconductor Corp CY7C136-55JXI. You can also check on our website or by contacting our customer support team for further order details on Cypress Semiconductor Corp CY7C136-55JXI.
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