Fujitsu Electronics America, Inc. MB85R256FPFCN-G-BNDE1

MB85R256FPFCN-G-BNDE1 Fujitsu Electronics America, Inc.
Fujitsu Electronics America, Inc.

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Memory Type:
Non-Volatile
Detailed Description:
FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-TSOP I
Mounting Type:
Surface Mount
Memory Interface:
Parallel
Supplier Device Package:
28-TSOP I
Write Cycle Time - Word, Page:
150ns
Packaging:
Tray
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
256Kb (32K x 8)
Voltage - Supply:
2.7V ~ 3.6V
Customer Reference:
Package / Case:
28-TSSOP (0.465", 11.80mm Width)
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Access Time:
150ns
Manufacturer:
Fujitsu Electronics America, Inc.
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This is manufactured by Fujitsu Electronics America, Inc.. The manufacturer part number is MB85R256FPFCN-G-BNDE1. It has typical 12 weeks of manufacturer standard lead time. It is a type of non-volatile memory type. It features fram (ferroelectric ram) memory ic 256kb (32k x 8) parallel 150ns 28-tsop i. The product is available in surface mount configuration. It is a parallel memory interface. 28-tsop i is the supplier device package value. It allows a 150ns of write cycle time. In addition, tray is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 256kb (32k x 8). It has optimum voltage supply of 2.7v ~ 3.6v. Moreover, the product comes in 28-tssop (0.465", 11.80mm width). It is a sort of fram memory. This product use fram (ferroelectric ram) technology. It allows 150ns access time. The fujitsu electronics america, inc.'s product offers user-desired applications.

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MB85R256F(Datasheets)

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