Cypress Semiconductor Corp CY62167GE30-45BV1XI

CY62167GE30-45BV1XI Cypress Semiconductor Corp
Cypress Semiconductor Corp

Product Information

HTSUS:
8542.32.0041
RoHS Status:
ROHS3 Compliant
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
45ns
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
16Mb (2M x 8, 1M x 16)
Package / Case:
48-VFBGA
REACH Status:
REACH Unaffected
Package:
Tray
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Access Time:
45 ns
Mounting Type:
Surface Mount
Series:
MoBL®
Supplier Device Package:
48-VFBGA (6x8)
Memory Type:
Volatile
Voltage - Supply:
2.2V ~ 3.6V
ECCN:
3A991B2A
Technology:
SRAM - Asynchronous
Base Product Number:
CY62167
Memory Format:
SRAM
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This is manufactured by Cypress Semiconductor Corp. The manufacturer part number is CY62167GE30-45BV1XI. It is assigned with possible HTSUS value of 8542.32.0041. The product is rohs3 compliant. It is a parallel memory interface. It allows a 45ns of write cycle time. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 16mb (2m x 8, 1m x 16). Moreover, the product comes in 48-vfbga. In addition, it is reach unaffected. It is shipped in tray package . Its typical moisture sensitivity level is 3 (168 hours). It allows 45 ns access time. The product is available in surface mount configuration. The product mobl®, is a highly preferred choice for users. 48-vfbga (6x8) is the supplier device package value. It is a type of volatile memory type. It has optimum voltage supply of 2.2v ~ 3.6v. The product is designated with the 3a991b2a code number. This product use sram - asynchronous technology. Moreover, it corresponds to cy62167, a base product number of the product. It is a sort of sram memory.

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Mult Dev Mark REV 9/Jul/2018(PCN Design/Specification)
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Design Revision 17/Sep/2019(PCN Design/Specification)
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Date Code/Shelf Life Chgs 18/Jul/2019(PCN Packaging)
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Ship Label REV(PCN Packaging)

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