Micron Technology Inc. MT49H32M18CSJ-25E IT:B TR

MT49H32M18CSJ-25E-IT-B-TR Micron Technology Inc. MT49H32M18CSJ-25E IT:B TR
Micron Technology Inc.

Product Information

HTSUS:
8542.32.0028
RoHS Status:
ROHS3 Compliant
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
-
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
576Mbit
Package / Case:
144-TFBGA
Packaging:
Tape & Reel (TR)
REACH Status:
REACH Unaffected
Memory Organization:
32M x 18
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Clock Frequency:
400 MHz
Access Time:
15 ns
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
144-FBGA (18.5x11)
Memory Type:
Volatile
Voltage - Supply:
1.7V ~ 1.9V
ECCN:
3A991B2A
Technology:
DRAM
Base Product Number:
MT49H32M18
Memory Format:
DRAM
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This is manufactured by Micron Technology Inc.. The manufacturer part number is MT49H32M18CSJ-25E IT:B TR. It is assigned with possible HTSUS value of 8542.32.0028. The product is rohs3 compliant. It is a parallel memory interface. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 576mbit. Moreover, the product comes in 144-tfbga. In addition, tape & reel (tr) is the available packaging type of the product. In addition, it is reach unaffected. While the product's memory is organised as 32m x 18. Its typical moisture sensitivity level is 3 (168 hours). The product boasts a clock frequency of 400 mhz. It allows 15 ns access time. The product is available in surface mount configuration. 144-fbga (18.5x11) is the supplier device package value. It is a type of volatile memory type. It has optimum voltage supply of 1.7v ~ 1.9v. The product is designated with the 3a991b2a code number. This product use dram technology. Moreover, it corresponds to mt49h32m18, a base product number of the product. It is a sort of dram memory.

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Mult Devices 30/Aug/2017(PCN Obsolescence/ EOL)
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MT49H32M18C, 64M9C(Datasheets)
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Standard Pkg Label Chg 20/Feb/2019(PCN Packaging)
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Label 12/Sep/2016(PCN Packaging)

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FAQs

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