NXP PMBFJ309,215 N-channel JFET Transistor, 25 V, Idss 12 → 30mA, 3-Pin SOT-23

PMBFJ309-215 NXP PMBFJ309,215 N-channel JFET Transistor, 25 V, Idss 12 → 30mA, 3-Pin SOT-23
PMBFJ309,215
NXP

Product Information

Maximum Drain Source Voltage:
25 V
Configuration:
Single
Dimensions:
3 x 1.4 x 1mm
Mounting Type:
Surface Mount
Maximum Gate Source Voltage:
-25 V
Idss Drain-Source Cut-off Current:
12 to 30mA
Height:
1mm
Width:
1.4mm
Length:
3mm
Maximum Drain Source Resistance:
50 Ω
Package Type:
SOT-23 (TO-236AB)
Maximum Drain Gate Voltage:
-25V
Minimum Operating Temperature:
-65 °C
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel JFET Transistor 25 V Idss 12 → 30mA 3-Pin SOT-23 manufactured by NXP. The manufacturer part number is PMBFJ309,215. It has a maximum of 25 v drain source voltage. The product is available in single configuration. The given dimensions of the product include 3 x 1.4 x 1mm. The product is available in surface mount configuration. It features a maximum gate source voltage of -25 v. Moreover, it has 12 to 30ma Idss drain source cut-off current . In addition, the height is 1mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3mm. It provides up to 50 ω maximum drain source resistance. The package is a sort of sot-23 (to-236ab). It has a maximum -25v drain gate voltage . Whereas, the minimum operating temperature of the product is -65 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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PMBFJ308 PMBFJ309 N-channel silicon field-effect transistors Data Sheet(Technical Reference)
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PMBFJ309 N-channel silicon field-effect transistors Data Sheet(Technical Reference)

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