Maximum Drain Source Voltage:
30 V
Configuration:
Single
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Idss Drain-Source Cut-off Current:
1.2 to 3mA
Source Gate On-Capacitance:
1.1pF
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Maximum Drain Source Resistance:
200 Ω
Package Type:
CP
Maximum Drain Gate Voltage:
-30V
Drain Gate On-Capacitance:
4pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SK3666
Detailed Description:
JFET N-Channel 10mA 200mW Surface Mount 3-CP
Input Capacitance (Ciss) (Max) @ Vds:
4pF @ 10V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
1.2mA @ 10V
Drain to Source Voltage (Vdss):
30V
Package / Case:
TO-236-3, SC-59, SOT-23-3
Resistance - RDS(On):
200 Ohms
Voltage - Cutoff (VGS off) @ Id:
180mV @ 1µA
Supplier Device Package:
3-CP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power - Max:
200mW
Current Drain (Id) - Max:
10mA
Manufacturer:
ON Semiconductor
