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ON Semiconductor NLAS4685FCT1G

NLAS4685FCT1G ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
2 Circuit IC Switch 2:1 800mOhm 10-Microbump (1.97x1.47)
-3db Bandwidth:
11.5MHz
Operating Temperature:
-55°C ~ 125°C (TA)
Channel-to-Channel Matching (ΔRon):
60mOhm
Package / Case:
10-UFBGA, FCBGA
Switch Time (Ton, Toff) (Max):
30ns, 25ns
Current - Leakage (IS(off)) (Max):
1µA
Base Part Number:
NLAS4
Multiplexer/Demultiplexer Circuit:
2:1
Manufacturer:
ON Semiconductor
Channel Capacitance (CS(off), CD(off)):
208pF, 102pF
Voltage - Supply, Single (V+):
1.8V ~ 5.5V
Switch Circuit:
SPDT
Number of Circuits:
2
Mounting Type:
Surface Mount
Crosstalk:
-81dB @ 100kHz
On-State Resistance (Max):
800mOhm
Supplier Device Package:
10-Microbump (1.97x1.47)
Charge Injection:
20pC
Packaging:
Tape & Reel (TR)
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NLAS4685FCT1G. It features 2 circuit ic switch 2:1 800mohm 10-microbump (1.97x1.47). A 11.5mhz of bandwidth. The product has -55°c ~ 125°c (ta) operating temperature range. Features 60mohm of channel-to-channel matching. Moreover, the product comes in 10-ufbga, fcbga. Has a 30ns, 25ns maximum switch time. The maximum current leakage of the product included 1µa. Base Part Number: nlas4. Ratio of multiplexer/demultiplexer circuit 2:1. The on semiconductor's product offers user-desired applications. Features 208pf, 102pf channel capacitance. Single voltage supply of 1.8v ~ 5.5v. Features switch circuit of spdt. It integrates 2 circuits. The product is available in surface mount configuration. A -81db @ 100khz of crosstalk. It has a maximum on-state resistance of 800mohm. 10-microbump (1.97x1.47) is the supplier device package value. It has 20pc charge injection parameters. In addition, tape & reel (tr) is the available packaging type of the product.

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Multiple Devices 03/Oct/2007(PCN Obsolescence/ EOL)
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NLAS4685(Datasheets)

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