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Infineon IKY120N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin

IKY120N65EH7XKSA1 Infineon Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin
Infineon

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
498 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
160 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
PG-TO247-4-PLUS-NN5.1
Configuration:
Single Collector, Single Emitter, Single Gate
Pin Count:
4
RoHs Compliant
Checking for live stock

This is Single Collector Single Emitter Single Gate IGBT 160 A 650 V 4-Pin manufactured by Infineon. The manufacturer part number is IKY120N65EH7XKSA1. The product is available in through hole configuration. Provides up to 498 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 160 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of pg-to247-4-plus-nn5.1. The product is available in single collector, single emitter, single gate configuration. It contains 4 pins.

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Datasheet - IKY120N65EH7XKSA1(Technical Reference)

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