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Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole

F3L225R12W3H3B11BPSA1 Infineon Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
Infineon

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
4
Channel Type:
N
Maximum Continuous Collector Current:
225 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
AG-62MMHB
Configuration:
Single Collector, Single Emitter, Single Gate
RoHs Compliant
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This is Single Collector Single Emitter Single Gate IGBT 225 A 1200 V AG-62MMHB Through Hole manufactured by Infineon. The manufacturer part number is F3L225R12W3H3B11BPSA1. The product is available in through hole configuration. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 4 transistors . The product is available in [Cannel Type] channel. The product has a maximum 225 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of ag-62mmhb. The product is available in single collector, single emitter, single gate configuration.

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Datasheet - F3L225R12W3H3B11BPSA1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole. You can also check on our website or by contacting our customer support team for further order details on Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole.
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