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Infineon IKZA50N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,

IKZA50N65EH7XKSA1 Infineon Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,
Infineon

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
PG-TO247-4-STD-NT3.7
Configuration:
Single Collector, Single Emitter, Single Gate
Pin Count:
4
RoHs Compliant
Checking for live stock

This is Single Collector Single Emitter Single Gate IGBT 80 A 650 V 4-Pin PG-TO247-4-STD-NT3.7 manufactured by Infineon. The manufacturer part number is IKZA50N65EH7XKSA1. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of pg-to247-4-std-nt3.7. The product is available in single collector, single emitter, single gate configuration. It contains 4 pins.

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Datasheet - IKZA50N65EH7XKSA1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IKZA50N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,. You can also check on our website or by contacting our customer support team for further order details on Infineon IKZA50N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 4-Pin PG-TO247-4-STD-NT3.7,.
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