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Infineon IKA08N65ET6XKSA1

IKA08N65ET6XKSA1 Infineon
Infineon

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
13.7 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
1899-12-31 08:00:00
Maximum Gate Emitter Voltage:
±20 V, ±30V
Package Type:
TO-220
Pin Count:
3
RoHs Compliant
Checking for live stock

This is manufactured by Infineon. The manufacturer part number is IKA08N65ET6XKSA1. The product is available in through hole configuration. Provides up to 13.7 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 1899-12-31 08:00:00 continuous collector current . It offers a maximum ±20 v, ±30v gate emitter voltage . The package is a sort of to-220. It contains 3 pins.

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Datasheet - IKA08N65ET6XKSA1(Technical Reference)

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Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IKA08N65ET6XKSA1. You can also check on our website or by contacting our customer support team for further order details on Infineon IKA08N65ET6XKSA1.
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