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Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount

FF600R12IP4BOSA1 Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount
Infineon

Product Information

Mounting Type:
Chassis Mount
Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
2
Maximum Continuous Collector Current:
600 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
AG-PRIME2
Configuration:
Dual
RoHs Compliant
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This is Dual IGBT 600 A 1200 V AG-PRIME2 Chassis Mount manufactured by Infineon. The manufacturer part number is FF600R12IP4BOSA1. The product is available in chassis mount configuration. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 600 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of ag-prime2. The product is available in dual configuration.

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Datasheet - FF600R12IP4BOSA1(Technical Reference)

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You can order Infineon brand products with FF600R12IP4BOSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount. You can also check on our website or by contacting our customer support team for further order details on Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount.
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