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Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

FF50R12RT4HOSA1 Infineon  Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Infineon

Product Information

Mounting Type:
Chassis Mount
Maximum Power Dissipation:
285 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
2
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
AG-34MM
Configuration:
Dual
RoHs Compliant
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This is Dual IGBT 50 A 1200 V AG-34MM Chassis Mount manufactured by Infineon. The manufacturer part number is FF50R12RT4HOSA1. The product is available in chassis mount configuration. Provides up to 285 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of ag-34mm. The product is available in dual configuration.

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Datasheet - FF50R12RT4HOSA1(Technical Reference)

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FAQs

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You can order Infineon brand products with FF50R12RT4HOSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount. You can also check on our website or by contacting our customer support team for further order details on Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET26078608 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET26078608.
Yes. We ship FF50R12RT4HOSA1 Internationally to many countries around the world.