Infineon FP50R12N2T7PBPSA1 IGBT, 50 A 1200 V

FP50R12N2T7PBPSA1 Infineon  IGBT, 50 A 1200 V
Infineon

Product Information

Maximum Continuous Collector Current:
50 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
20V
Maximum Power Dissipation:
20 mW
RoHs Compliant
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This is IGBT 50 A 1200 V manufactured by Infineon. The manufacturer part number is FP50R12N2T7PBPSA1. The product has a maximum 50 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). It offers a maximum 20v gate emitter voltage . Provides up to 20 mw maximum power dissipation.

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Datasheet - FP50R12N2T7PBPSA1(Technical Reference)

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