Infineon FP150R12N3T7B11BPSA1 IGBT, 150 A 1200 V

FP150R12N3T7B11BPSA1 Infineon  IGBT, 150 A 1200 V
Infineon

Product Information

Maximum Continuous Collector Current:
150 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
20V
Maximum Power Dissipation:
20 mW
RoHs Compliant
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This is IGBT 150 A 1200 V manufactured by Infineon. The manufacturer part number is FP150R12N3T7B11BPSA1. The product has a maximum 150 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). It offers a maximum 20v gate emitter voltage . Provides up to 20 mw maximum power dissipation.

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Datasheet - FP150R12N3T7B11BPSA1(Technical Reference)

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FAQs

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