Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

BIDW50N65T Bourns  Single Diode IGBT, 50 A 650 V TO-247
Bourns

Product Information

Maximum Power Dissipation:
416 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Configuration:
Single Diode
RoHs Compliant
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This is Single Diode IGBT 50 A 650 V TO-247 manufactured by Bourns. The manufacturer part number is BIDW50N65T. Provides up to 416 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. The product is available in single diode configuration.

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Datasheet - BIDW50N65T(Technical Reference)

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FAQs

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You can order Bourns brand products with BIDW50N65T directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247. You can also check on our website or by contacting our customer support team for further order details on Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET24166419 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Bourns" products on our website by using Enrgtech's Unique Manufacturing Part Number ET24166419.
Yes. We ship BIDW50N65T Internationally to many countries around the world.