Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V

FF900R17ME7B11BPSA1 Infineon  IGBT Module, 900 A 1700 V
Infineon

Product Information

Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1700 V
Number of Transistors:
2
Maximum Continuous Collector Current:
900 A
Maximum Gate Emitter Voltage:
±20V
RoHs Compliant
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This is IGBT Module 900 A 1700 V manufactured by Infineon. The manufacturer part number is FF900R17ME7B11BPSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 1700 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 900 a continuous collector current . It offers a maximum ±20v gate emitter voltage .

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Datasheet - FF900R17ME7B11BPSA1(Technical Reference)

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