Half Bridge IGBT Transistor Module, 150 A 1200 V

SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
Semikron

Product Information

Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
2
Maximum Continuous Collector Current:
150 A
Maximum Gate Emitter Voltage:
±15.0V
Configuration:
Half Bridge
RoHs Compliant
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This is Half Bridge IGBT Transistor Module 150 A 1200 V manufactured by Semikron. The manufacturer part number is SKM150GB12F4. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 150 a continuous collector current . It offers a maximum ±15.0v gate emitter voltage . The product is available in half bridge configuration.

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Datasheet - SKM150GB12F4(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Half Bridge IGBT Transistor Module, 150 A 1200 V. You can also check on our website or by contacting our customer support team for further order details on Half Bridge IGBT Transistor Module, 150 A 1200 V.
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