Infineon FS3L200R10W3S7FB94BPSA1 IGBT Module, 70 A 950 V

FS3L200R10W3S7FB94BPSA1 Infineon  IGBT Module, 70 A 950 V
Infineon

Product Information

Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
950 V
Number of Transistors:
6
Maximum Continuous Collector Current:
70 A
Maximum Gate Emitter Voltage:
±20V
RoHs Compliant
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This is IGBT Module 70 A 950 V manufactured by Infineon. The manufacturer part number is FS3L200R10W3S7FB94BPSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 950 v of collector emitter voltage (max). It has 6 transistors . The product has a maximum 70 a continuous collector current . It offers a maximum ±20v gate emitter voltage .

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Datasheet - FS3L200R10W3S7FB94BPSA1(Technical Reference)

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FAQs

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