Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V

FS150R12KT4B11BOSA1 Infineon  IGBT Module, 150 A 1200 V
Infineon

Product Information

Maximum Power Dissipation:
750 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
6
Maximum Continuous Collector Current:
150 A
Maximum Gate Emitter Voltage:
+/-20V
RoHs Compliant
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This is IGBT Module 150 A 1200 V manufactured by Infineon. The manufacturer part number is FS150R12KT4B11BOSA1. Provides up to 750 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 6 transistors . The product has a maximum 150 a continuous collector current . It offers a maximum +/-20v gate emitter voltage .

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Datasheet - FS150R12KT4B11BOSA1(Technical Reference)

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FAQs

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