Infineon FP10R12W1T4BOMA1 IGBT Module, 20 A 1200 V

FP10R12W1T4BOMA1 Infineon  IGBT Module, 20 A 1200 V
Infineon

Product Information

Maximum Power Dissipation:
105 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
7
Maximum Continuous Collector Current:
20 A
Maximum Gate Emitter Voltage:
+/-20V
RoHs Compliant
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This is IGBT Module 20 A 1200 V manufactured by Infineon. The manufacturer part number is FP10R12W1T4BOMA1. Provides up to 105 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 20 a continuous collector current . It offers a maximum +/-20v gate emitter voltage .

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Datasheet - FP10R12W1T4BOMA1(Technical Reference)

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