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This is manufactured by onsemi. The manufacturer part number is NXH80T120L3Q0S3G. Provides up to 188 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 4 transistors . The product has a maximum 75 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of q0pack - case 180ab (pb-free and halide-free). The maximum collector current includes 75 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.4v @ 15v, 80a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -40°c ~ 175°c (tj) operating temperature range. It holds 18.15 nf @ 20 v of input capacitance. Moreover, the product comes in module. Its input values include standard. NTC Thermistor - yes. In addition, it is reach unaffected. The product is available in half bridge configuration. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. It has a long 13 weeks standard lead time. Features an IGBT trench field stop type. In addition, 300 µa is the maximum current at collector cutoff. The product is available in chassis mount configuration. 20-pim/q0pack (55x32.5) is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 188 w. The product is designated with the ear99 code number.
For more information please check the datasheets.
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