Infineon IKN03N60RC2ATMA1 IGBT, 5.7 A 600 V PG-SOT223-3

IKN03N60RC2ATMA1 Infineon  IGBT, 5.7 A 600 V PG-SOT223-3
Infineon

Product Information

Maximum Power Dissipation:
6.3 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
1
Maximum Continuous Collector Current:
5.7 A
Maximum Gate Emitter Voltage:
20V
Package Type:
PG-SOT223-3
RoHs Compliant
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This is IGBT 5.7 A 600 V PG-SOT223-3 manufactured by Infineon. The manufacturer part number is IKN03N60RC2ATMA1. Provides up to 6.3 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 5.7 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of pg-sot223-3.

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Datasheet - IKN03N60RC2ATMA1(Technical Reference)

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