ROHM RGW80TS65EHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

RGW80TS65EHRC11 ROHM  Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole
ROHM

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
214 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247N
Configuration:
Single
Pin Count:
3
Transistor Configuration:
Common Emitter
RoHs Compliant
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This is Single IGBT 40 A 650 V 3-Pin TO-247N Through Hole manufactured by ROHM. The manufacturer part number is RGW80TS65EHRC11. The product is available in through hole configuration. Provides up to 214 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247n. The product is available in single configuration. It contains 3 pins. The product offers common emitter transistor configuration.

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Datasheet - RGW80TS65EHRC11(Technical Reference)

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