Infineon IKWH50N65WR6XKSA1 Single IGBT, 50 A 650 V, 3-Pin TO-247-3-HCC, Through Hole

IKWH50N65WR6XKSA1 Infineon  Single IGBT, 50 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
Infineon

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
103 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247-3-HCC
Configuration:
Single
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is Single IGBT 50 A 650 V 3-Pin TO-247-3-HCC Through Hole manufactured by Infineon. The manufacturer part number is IKWH50N65WR6XKSA1. The product is available in through hole configuration. Provides up to 103 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247-3-hcc. The product is available in single configuration. It contains 3 pins. The product offers single transistor configuration.

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Datasheet - IKWH50N65WR6XKSA1(Technical Reference)

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