Infineon FP200R12N3T7BPSA1 3 Phase IGBT, 200 A 1200 V, 46-Pin Module, Chassis Mount

FP200R12N3T7BPSA1 Infineon  3 Phase IGBT, 200 A 1200 V, 46-Pin Module, Chassis Mount
Infineon

Product Information

Mounting Type:
Chassis Mount
Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
7
Channel Type:
N
Maximum Continuous Collector Current:
200 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
Module
Configuration:
3 Phase
Pin Count:
46
Transistor Configuration:
3 Phase
RoHs Compliant
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This is 3 Phase IGBT 200 A 1200 V 46-Pin Module Chassis Mount manufactured by Infineon. The manufacturer part number is FP200R12N3T7BPSA1. The product is available in chassis mount configuration. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product is available in [Cannel Type] channel. The product has a maximum 200 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of module. The product is available in 3 phase configuration. It contains 46 pins. The product offers 3 phase transistor configuration.

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Datasheet - FP200R12N3T7BPSA1(Technical Reference)

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