Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

FP50R12W2T7B11BOMA1 Infineon  IGBT, 50 A 1200 V AG-EASY2B
Infineon

Product Information

Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
20V
Package Type:
AG-EASY2B
Transistor Configuration:
Common Emitter
RoHs Compliant
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This is IGBT 50 A 1200 V AG-EASY2B manufactured by Infineon. The manufacturer part number is FP50R12W2T7B11BOMA1. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of ag-easy2b. The product offers common emitter transistor configuration.

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Datasheet - FP50R12W2T7B11BOMA1(Technical Reference)

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