Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

FF900R12ME7B11BOSA1 Infineon  Dual IGBT, 900 A 1200 V AG-ECONOD
Infineon

Product Information

Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
900 A
Maximum Gate Emitter Voltage:
20V
Package Type:
AG-ECONOD
Configuration:
Dual
Transistor Configuration:
Common Emitter
RoHs Compliant
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This is Dual IGBT 900 A 1200 V AG-ECONOD manufactured by Infineon. The manufacturer part number is FF900R12ME7B11BOSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 900 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of ag-econod. The product is available in dual configuration. The product offers common emitter transistor configuration.

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Datasheet - FF900R12ME7B11BOSA1(Technical Reference)

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