Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

IGB50N65H5ATMA1 Infineon  IGBT, 80 A 650 V, 3-Pin TO-263
Infineon

Product Information

Maximum Power Dissipation:
270 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
20V
Package Type:
TO-263
Pin Count:
3
RoHs Compliant
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This is IGBT 80 A 650 V 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IGB50N65H5ATMA1. Provides up to 270 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of to-263. It contains 3 pins.

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Datasheet - IGB50N65H5ATMA1(Technical Reference)

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