Infineon FF600R12KE4EBOSA1 Common Emitter IGBT Module, 600 A 1200 V, 7-Pin 62 mm

FF600R12KE4EBOSA1 Infineon  Common Emitter IGBT Module, 600 A 1200 V, 7-Pin 62 mm
Infineon

Product Information

Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
2
Channel Type:
N
Maximum Continuous Collector Current:
600 A
Maximum Gate Emitter Voltage:
20V
Package Type:
62 mm
Configuration:
Common Emitter
Pin Count:
7
Transistor Configuration:
Common Emitter
RoHs Compliant
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This is Common Emitter IGBT Module 600 A 1200 V 7-Pin 62 mm manufactured by Infineon. The manufacturer part number is FF600R12KE4EBOSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product is available in [Cannel Type] channel. The product has a maximum 600 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of 62 mm. The product is available in common emitter configuration. It contains 7 pins. The product offers common emitter transistor configuration.

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Datasheet - FF600R12KE4EBOSA1(Technical Reference)

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